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Suitability of Current Sensors for the Measurement of Switching Currents in Power Semiconductors

  • This paper investigates the impact of current sensors on the measurement of transient currents in fast-switching power semiconductors in a double pulse test (DPT environment. We review previous research that assesses the influence of current sensors on a DPT circuit through mathematical modeling. The developed selection aids can be used to identify suitable current sensors for transient current measurements of fast-switching power semiconductors and to estimate the error introduced by their insertion into the DPT circuit. Afterwards, this analysis is extended by including further elements from real DPT applications to increase the consistency of the error estimation with practical situations and setups. Both methods are compared and their individual advantages and drawbacks are discussed. Finally, a recommendation on when to use which method is derived.

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Metadaten
Document Type:Article
Language:English
Author:Sebastian Sprunck, Christian Lottis, Fabian Schnabel, Marco Jung
Parent Title (English):IEEE Open Journal of Power Electronics
Pagenumber:12
ISSN:2644-1314
DOI:https://doi.org/10.1109/OJPEL.2021.3127225
Publisher:IEEE
Publishing Institution:Hochschule Bonn-Rhein-Sieg
Date of first publication:2021/11/13
Keyword:Current measurement; double pulse test; error analysis; measurement errors; power semiconductors; sensor phenomena and characterization; wide band gap
Departments, institutes and facilities:Fachbereich Elektrotechnik, Maschinenbau, Technikjournalismus
Institut für Technik, Ressourcenschonung und Energieeffizienz (TREE)
projects:Verbundvorhaben: LEITNING (DE/BMWi/03EI6030E)
Entry in this database:2021/11/24
Licence (German):License LogoCreative Commons - CC BY - Namensnennung 4.0 International